vishay gdz-series document number 85766 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 1 17431 small signal zener diodes features ? silicon planar power zener diodes low zener impedence and low leakage current popular in asian designs compact surface mount device ideal for automated mounting mechanical data case: sod-323 plastic case weight: approx. 5.0 mg packaging codes/options: gs18/ 10 k per 13 " reel (8 mm tape), 10 k/box gs08/ 3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation p d 200 mw parameter test condition symbol value unit junction temperature t j 150 c storage temperature range t stg - 55 to + 150
www.vishay.com 2 document number 85766 rev. 1.4, 08-jul-04 vishay gdz-series vishay semiconductors electrical characteristics notes: (1) the zener voltage v (z) is measured 40 ms after power is supplied. (2) the operating resistance (z z , z zk ) are measured by superimposing a 1 khz alte rnating current on the regulated current (i z ). partnumber marking code zener voltage subdivision operating resistance rising operating resistance test current reverse current v z @ i zt v z @ i zt1 z z @ i zt1 z zk @ i zt2 i zt1 i zt2 i r @ v r v v ? ma ma a v min max max max gdz2v0b 0 2 2.020 2.200 100 1000 5 0.5 120 0.5 gdz2v2b 1 2 2.220 2.410 100 1000 5 0.5 120 0.7 gdz2v4b 2 2 2.430 2.630 100 1000 5 0.5 120 1.0 gdz2v7b 3 2 2.690 2.910 110 1000 5 0.5 100 1.0 gdz3v0b 4 2 3.010 3.220 120 1000 5 0.5 50 1.0 gdz3v3b 5 2 3.320 3.530 120 1000 5 0.5 20 1.0 gdz3v6b 6 2 3.600 3.845 100 1000 5 1.0 10 1.0 gdz3v9b 7 2 3.890 4.160 100 1000 5 1.0 5.0 1.0 gdz4v3b 8 2 4.170 4.430 100 1000 5 1.0 5.0 1.0 gdz4v7b 9 2 4.550 4.750 100 800 5 0.5 2.0 1.0 gdz5v1b t 1 4.980 5.200 80 500 5 0.5 2.0 1.0 gdz5v6b t 2 5.490 5.730 60 200 5 0.5 1.0 2.5 gdz6v2b t 3 6.060 6.330 60 100 5 0.5 1.0 3.0 gdz6v8b t 4 6.650 6.930 40 60 5 0.5 0.5 3.5 gdz7v5b t 5 7.280 7.600 30 60 5 0.5 0.5 4.0 gdz8v2b t 6 8.020 8.360 30 60 5 0.5 0.5 5.0 gdz9v1b t 7 8.850 9.230 30 60 5 0.5 0.5 6.0 gdz10b t 8 9.770 10.210 30 60 5 0.5 0.1 7.0 gdz11b t 9 10.760 11.220 30 60 5 0.5 0.1 8.0 gdz12b t a 11.740 12.240 30 80 5 0.5 0.1 9.0 gdz13b t b 12.910 13.490 37 80 5 0.5 0.1 10.0 gdz15b t c 14.340 14.980 42 80 5 0.5 0.1 11.0 gdz16b t d 15.850 16.510 50 80 5 0.5 0.1 12.0 gdz18b t e 17.560 18.350 65 80 5 0.5 0.1 13.0 gdz20b t h 19.520 20.390 85 100 5 0.5 0.1 15.0 gdz22b t k 21.540 22.470 100 100 5 0.5 0.1 17.0 gdz24b t l 23.720 24.780 120 120 5 0.5 0.1 19.0 gdz27b t m 26.190 27.530 150 150 5 0.5 0.1 21.0 gdz30b t n 29.190 30.690 200 200 5 0.5 0.1 23.0 gdz33b t p 32.150 33.790 250 250 5 0.5 0.1 25.0 gdz36b t t 35.070 36.870 300 300 5 0.5 0.1 27.0
vishay gdz-series document number 85766 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) 17443 cathode band 0.3 (0.012) 2.85 (0.112) 2.50 (0.098) 1.95 (0.076) 1.60 (0.062) 1.1 (0.043) 1.5 (0.059) 0.15 (0.006) max. 1.25 (0.049) max. 0.1 (0.004) max. 0.25 (0.010) min. 1.60 (0.062) 1.40 (0.055) 0.39 (0.015) iso method e mounting pad layout
www.vishay.com 4 document number 85766 rev. 1.4, 08-jul-04 vishay gdz-series vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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